Charged defects-controlled conductivity in Ge-ln-Se glasses
Identifieur interne : 000209 ( Main/Exploration ); précédent : 000208; suivant : 000210Charged defects-controlled conductivity in Ge-ln-Se glasses
Auteurs : RBID : ISTEX:10853_1994_Article_BF00357356.pdfAbstract
The variation of the d.c. electrical conductivity, σ, with composition and temperature was investigated for glasses of the Ge-In-Se system. The results indicate a decrease in the activation energy for electrical conductivity, ΔE, and an increase in σ on introduction of indium into Ge-Se glasses. The changes in ΔE and σ with composition (selenium content in the glasses) are identical for the Gex In5 Se95−x and Gex In8Se92−x families. The results have been traced to the conduction controlled by charged defects in these chalcogenide glasses. The changes in ΔE and σ have been explained by a shift in the Fermi level, being brought by the introduction of indium.
DOI: 10.1007/BF00357356
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Charged defects-controlled conductivity in Ge-ln-Se glasses</title><author><name>Sudha Mahadevan</name><affiliation wicri:level="1"><mods:affiliation>Materials Science Division, National Aeronautical Laboratory, 560017, Bangalore, India</mods:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>Materials Science Division, National Aeronautical Laboratory, 560017, Bangalore</wicri:regionArea><wicri:noRegion>Bangalore</wicri:noRegion></affiliation></author><author><name>A. Giridhar</name><affiliation wicri:level="1"><mods:affiliation>Materials Science Division, National Aeronautical Laboratory, 560017, Bangalore, India</mods:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>Materials Science Division, National Aeronautical Laboratory, 560017, Bangalore</wicri:regionArea><wicri:noRegion>Bangalore</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10853_1994_Article_BF00357356.pdf</idno><date when="1994">1994</date><idno type="doi">10.1007/BF00357356</idno><idno type="wicri:Area/Main/Corpus">000398</idno><idno type="wicri:Area/Main/Curation">000398</idno><idno type="wicri:Area/Main/Exploration">000209</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The variation of the d.c. electrical conductivity, σ, with composition and temperature was investigated for glasses of the Ge-In-Se system. The results indicate a decrease in the activation energy for electrical conductivity, ΔE, and an increase in σ on introduction of indium into Ge-Se glasses. The changes in ΔE and σ with composition (selenium content in the glasses) are identical for the Gex In5 Se95−x and Gex In8Se92−x families. The results have been traced to the conduction controlled by charged defects in these chalcogenide glasses. The changes in ΔE and σ have been explained by a shift in the Fermi level, being brought by the introduction of indium.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="44c396c7f1191f5887f92e9a9aea3485dd276f0e"><titleInfo lang="eng"><title>Charged defects-controlled conductivity in Ge-ln-Se glasses</title></titleInfo><name type="personal"><namePart type="given">Sudha</namePart><namePart type="family">Mahadevan</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Materials Science Division, National Aeronautical Laboratory, 560017, Bangalore, India</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Giridhar</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Materials Science Division, National Aeronautical Laboratory, 560017, Bangalore, India</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1992-10-07</dateCreated><dateCaptured encoding="w3cdtf">1994-01-19</dateCaptured><dateValid encoding="w3cdtf">2004-09-05</dateValid><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The variation of the d.c. electrical conductivity, σ, with composition and temperature was investigated for glasses of the Ge-In-Se system. The results indicate a decrease in the activation energy for electrical conductivity, ΔE, and an increase in σ on introduction of indium into Ge-Se glasses. The changes in ΔE and σ with composition (selenium content in the glasses) are identical for the Gex In5 Se95−x and Gex In8Se92−x families. The results have been traced to the conduction controlled by charged defects in these chalcogenide glasses. The changes in ΔE and σ have been explained by a shift in the Fermi level, being brought by the introduction of indium.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>JOURNAL OF MATERIALS SCIENCE</title></titleInfo><titleInfo><title>Journal of Materials Science</title><partNumber>Year: 1994</partNumber><partNumber>Volume: 29</partNumber><partNumber>Number: 14</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1994-01-01</dateIssued><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><subject usage="primary"><topic>Engineering</topic><topic>Polymer Sciences</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Mechanics</topic><topic>Materials Processing, Characterization, and Design</topic></subject><identifier type="issn">0022-2461</identifier><identifier type="issn">Electronic: 1573-4803</identifier><identifier type="matrixNumber">10853</identifier><identifier type="local">IssueArticleCount: 37</identifier><recordInfo><recordOrigin>Chapman & Hall, 1994</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00357356</identifier><identifier type="matrixNumber">Art35</identifier><identifier type="local">BF00357356</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>3837</start><end>3842</end></extent></part><recordInfo><recordOrigin>Chapman & Hall, 1994</recordOrigin><recordIdentifier>10853_1994_Article_BF00357356.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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